TINA 901
robust and reliable

The operation of this plant is based on the combination of two of our processes, which have stood the test of time: hollow cathode arc discharge, and vacuum arc discharge.

High plasma density is adjustable through hollow cathode discharge under low gas pressure.

Substrates are heated by electron impact and cleaned by ion bombardment.

The use of large evaporation sources with Ti, Cr, Zr, and TiAl targets enables deposition of metal nitrides, carbides and carbonitrides.

A dependable Siemens control system handles the automated process, and charging capacity is greatly enhanced by the use of a rotary table.

Sputter sources can be included, if required.